Ultrathin Sub-5-nm Hf1-xZrxO2for a Stacked Gate-all-Around Nanowire Ferroelectric FET with Internal Metal Gate

Shen Yang Lee, Chia Chin Lee, Yi Shan Kuo, Shou Wei Li, Tien Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This study investigates a device's ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with pure hafnium (HfO2) is used as a control measure and the impact of an internal metal gate (IMG) is also discussed. The study was conducted by using a sub-5-nm HZO and seed layer to fabricate a gate-all-around (GAA) nanowire (NW); a FeFET with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure; and a double layer (DL) of the channel. The channel size used in the experiment was approximately 9.6times16 nm2 and the total thickness of the gate stack was 9.2 nm. This thickness is 50.5% less than our previous experiment. The FeFET exhibits a considerably high {I}-{on} - {I}-{off} ratio exceeding 107. The IMG serves as a potential equalizer and the ferroelectric material is arranged in a more symmetrical electric field. This results in a lower subthreshold (sub- {V}-{TH} ) swing ( S.S.-{min}= 49.3mV/decade) with a wide range ( 10 {3} ) of drain currentcompared to that without an IMG. The findings indicate that a high-performance GAA FET can be achieved by combining a DL channel, GAA NW, ferroelectric material, and an IMG.

原文English
文章編號9344700
頁(從 - 到)236-241
頁數6
期刊IEEE Journal of the Electron Devices Society
9
DOIs
出版狀態Published - 2月 2021

指紋

深入研究「Ultrathin Sub-5-nm Hf1-xZrxO2for a Stacked Gate-all-Around Nanowire Ferroelectric FET with Internal Metal Gate」主題。共同形成了獨特的指紋。

引用此