Ultrathin Ox/Nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

M. F. Wang; C. H. Chen; M. C. Yu; Tuo-Hung Hou; Y. M. Lin; S. C. Chen; Y. K. Fang; C. H. Yu; M. S. Liang

doi:10.1109/VTSA.2001.934521

Ultrathin Ox/Nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

M. F. Wang, C. H. Chen, M. C. Yu, Tuo-Hung Hou, Y. M. Lin, S. C. Chen, Y. K. Fang, C. H. Yu, M. S. Liang

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摘要

The paper gives a short overview of Ox/Nitride gate stack prepared by Rapid Thermal Chemical Vapor Deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the unlike characteristics of different interfacial oxide in Ox/Nitride gate stack. Post deposition annealing is also investigated including NH3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.

原文	English
頁（從 - 到）	208-211
頁數	4
期刊	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.2001.934521
出版狀態	Published - 4月 2001

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10.1109/VTSA.2001.934521

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abstract = "The paper gives a short overview of Ox/Nitride gate stack prepared by Rapid Thermal Chemical Vapor Deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the unlike characteristics of different interfacial oxide in Ox/Nitride gate stack. Post deposition annealing is also investigated including NH3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.",

author = "Wang, {M. F.} and Chen, {C. H.} and Yu, {M. C.} and Tuo-Hung Hou and Lin, {Y. M.} and Chen, {S. C.} and Fang, {Y. K.} and Yu, {C. H.} and Liang, {M. S.}",

year = "2001",

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doi = "10.1109/VTSA.2001.934521",

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journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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T1 - Ultrathin Ox/Nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

AU - Wang, M. F.

AU - Chen, C. H.

AU - Yu, M. C.

AU - Hou, Tuo-Hung

AU - Lin, Y. M.

AU - Chen, S. C.

AU - Fang, Y. K.

AU - Yu, C. H.

AU - Liang, M. S.

PY - 2001/4

Y1 - 2001/4

N2 - The paper gives a short overview of Ox/Nitride gate stack prepared by Rapid Thermal Chemical Vapor Deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the unlike characteristics of different interfacial oxide in Ox/Nitride gate stack. Post deposition annealing is also investigated including NH3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.

AB - The paper gives a short overview of Ox/Nitride gate stack prepared by Rapid Thermal Chemical Vapor Deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the unlike characteristics of different interfacial oxide in Ox/Nitride gate stack. Post deposition annealing is also investigated including NH3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.

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U2 - 10.1109/VTSA.2001.934521

DO - 10.1109/VTSA.2001.934521

M3 - Article

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JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

ER -

Ultrathin Ox/Nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

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