@article{10662bc4fd9a4304922060f3091a4a2c,
title = "Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor",
abstract = "An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.",
author = "Lin, {Chih Heng} and Hsiao, {Cheng Yun} and Hung, {Cheng Hsiung} and Lo, {Yen Ren} and Lee, {Cheng Che} and Su, {Chun Jung} and Horng-Chih Lin and Fu-Hsiang Ko and Huang, {Tiao Yuan} and Yuh-Shyong Yang",
year = "2008",
month = nov,
day = "24",
doi = "10.1039/b812968a",
language = "English",
pages = "5749--5751",
journal = "Chemical Communications",
issn = "1359-7345",
publisher = "Royal Society of Chemistry",
number = "44",
}