摘要
Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.
原文 | English |
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文章編號 | 2001943 |
頁(從 - 到) | 1-6 |
頁數 | 6 |
期刊 | Advanced Materials |
卷 | 32 |
發行號 | 28 |
DOIs | |
出版狀態 | Published - 1 7月 2020 |