Ultralow Voltage Manipulation of Ferromagnetism

Bhagwati Prasad*, Yen-Lin Huang, Rajesh V. Chopdekar, Zuhuang Chen, James Steffes, Sujit Das, Qian Li, Mengmeng Yang, Chia Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Zi Qiang Qiu, Lane W. Martin, Bryan D. Huey, Ian Young, Jorge Íñiguez, Sasikanth Manipatruni, Ramamoorthy Ramesh

*此作品的通信作者

研究成果: Article同行評審

46 引文 斯高帕斯(Scopus)

摘要

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.

原文English
文章編號2001943
頁(從 - 到)1-6
頁數6
期刊Advanced Materials
32
發行號28
DOIs
出版狀態Published - 1 7月 2020

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