Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz

N. L. Wang, N. H. Sheng, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, E. A. Sovero, J. A. Higgins, P. M. Asbeck

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    64 引文 斯高帕斯(Scopus)

    摘要

    In this paper, ultrahigh power-added efficiency is reported for AJGaAs/GaAs HBT's operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Details of the operation of both CE and CB HBT's are described and compared. Current gain, stability, near class B operation, and power saturation characteristics are discussed. Differences from FET behavior are highlighted.

    原文English
    頁(從 - 到)1381-1390
    頁數10
    期刊IEEE Transactions on Microwave Theory and Techniques
    38
    發行號10
    DOIs
    出版狀態Published - 1 1月 1990

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