Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz

N. L. Wang; N. H. Sheng; Mau-Chung Chang; W. J. Ho; G. J. Sullivan; E. A. Sovero; J. A. Higgins; P. M. Asbeck

doi:10.1109/22.58675

Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz

N. L. Wang, N. H. Sheng, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, E. A. Sovero, J. A. Higgins, P. M. Asbeck

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摘要

In this paper, ultrahigh power-added efficiency is reported for AJGaAs/GaAs HBT's operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Details of the operation of both CE and CB HBT's are described and compared. Current gain, stability, near class B operation, and power saturation characteristics are discussed. Differences from FET behavior are highlighted.

原文	English
頁（從 - 到）	1381-1390
頁數	10
期刊	IEEE Transactions on Microwave Theory and Techniques
卷	38
發行號	10
DOIs	https://doi.org/10.1109/22.58675
出版狀態	Published - 1 1月 1990

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abstract = "In this paper, ultrahigh power-added efficiency is reported for AJGaAs/GaAs HBT's operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Details of the operation of both CE and CB HBT's are described and compared. Current gain, stability, near class B operation, and power saturation characteristics are discussed. Differences from FET behavior are highlighted.",

author = "Wang, {N. L.} and Sheng, {N. H.} and Mau-Chung Chang and Ho, {W. J.} and Sullivan, {G. J.} and Sovero, {E. A.} and Higgins, {J. A.} and Asbeck, {P. M.}",

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AU - Wang, N. L.

AU - Sheng, N. H.

AU - Chang, Mau-Chung

AU - Ho, W. J.

AU - Sullivan, G. J.

AU - Sovero, E. A.

AU - Higgins, J. A.

AU - Asbeck, P. M.

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N2 - In this paper, ultrahigh power-added efficiency is reported for AJGaAs/GaAs HBT's operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Details of the operation of both CE and CB HBT's are described and compared. Current gain, stability, near class B operation, and power saturation characteristics are discussed. Differences from FET behavior are highlighted.

AB - In this paper, ultrahigh power-added efficiency is reported for AJGaAs/GaAs HBT's operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Details of the operation of both CE and CB HBT's are described and compared. Current gain, stability, near class B operation, and power saturation characteristics are discussed. Differences from FET behavior are highlighted.

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Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz

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