Ultrafast exciton trapping and exciton-exciton annihilation in large-area CVD-grown monolayer WS₂

Keyphrases

• Chemical Vapor Deposition 100%
• Transition Metal Dichalcogenides 100%
• Ultrafast 100%
• Exciton-exciton Annihilation 100%
• Monolayer WS2 100%
• Exciton Trapping 100%
• Band Edge 66%
• Flakes 66%
• Transport Properties 33%
• Carrier Dynamics 33%
• Exciton Decay 33%
• Carrier Transport 33%
• Optoelectronic Properties 33%
• Mechanical Properties 33%
• Device Application 33%
• Optoelectronic Applications 33%
• Carrier Recombination 33%
• Dynamic Properties 33%
• Two-dimensional Transition Metal Dichalcogenides 33%
• Defect States 33%
• Induced Defects 33%
• Ultrafast Carrier Dynamics 33%
• Density Dependence 33%
• Excitation Density 33%
• Decay Dynamics 33%
• Transient Absorption Spectroscopy 33%
• Monolayer Tungsten Disulfide 33%
• Transient Optical Response 33%

Material Science

• Monolayers 100%
• Chemical Vapor Deposition 100%
• Transition Metal Dichalcogenide 100%
• Density 25%
• Absorption Spectroscopy 25%
• Tungsten 25%