Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy

Shih Chen Chen; Yu Kuang Liao; Hsueh Ju Chen; Chia Hsiang Chen; Chih Huang Lai; Yu Lun Chueh; Hao-Chung Kuo; Kaung-Hsiung Wu; Jenh-Yih Juang; Shun-Jen Cheng; Tung Po Hsieh; Takayoshi Kobayashi

doi:10.1364/OE.20.012675

Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy

Shih Chen Chen^*, Yu Kuang Liao, Hsueh Ju Chen, Chia Hsiang Chen, Chih Huang Lai, Yu Lun Chueh, Hao-Chung Kuo, Kaung-Hsiung Wu, Jenh-Yih Juang, Shun-Jen Cheng, Tung Po Hsieh, Takayoshi Kobayashi

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15 引文斯高帕斯（Scopus）

摘要

Ultrafast carrier dynamics in Cu(In,Ga)Se2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former.

原文	English
頁（從 - 到）	12675-12681
頁數	7
期刊	Optics Express
卷	20
發行號	12
DOIs	https://doi.org/10.1364/OE.20.012675
出版狀態	Published - 4 6月 2012

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title = "Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy",

abstract = "Ultrafast carrier dynamics in Cu(In,Ga)Se2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former.",

author = "Chen, {Shih Chen} and Liao, {Yu Kuang} and Chen, {Hsueh Ju} and Chen, {Chia Hsiang} and Lai, {Chih Huang} and Chueh, {Yu Lun} and Hao-Chung Kuo and Kaung-Hsiung Wu and Jenh-Yih Juang and Shun-Jen Cheng and Hsieh, {Tung Po} and Takayoshi Kobayashi",

year = "2012",

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doi = "10.1364/OE.20.012675",

language = "English",

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T1 - Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy

AU - Chen, Shih Chen

AU - Liao, Yu Kuang

AU - Chen, Hsueh Ju

AU - Chen, Chia Hsiang

AU - Lai, Chih Huang

AU - Chueh, Yu Lun

AU - Kuo, Hao-Chung

AU - Wu, Kaung-Hsiung

AU - Juang, Jenh-Yih

AU - Cheng, Shun-Jen

AU - Hsieh, Tung Po

AU - Kobayashi, Takayoshi

PY - 2012/6/4

Y1 - 2012/6/4

N2 - Ultrafast carrier dynamics in Cu(In,Ga)Se2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former.

AB - Ultrafast carrier dynamics in Cu(In,Ga)Se2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former.

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U2 - 10.1364/OE.20.012675

DO - 10.1364/OE.20.012675

M3 - Article

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AN - SCOPUS:84863771441

SN - 1094-4087

VL - 20

SP - 12675

EP - 12681

JO - Optics Express

JF - Optics Express

IS - 12

ER -

Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy

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