Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

Kien-Wen Sun*, A. Kechiantz, B. C. Lee, C. P. Lee

*此作品的通信作者

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25 引文 斯高帕斯(Scopus)

摘要

We report investigations on carrier capture and relaxation processes in undoped and modulation-doped InAsGaAs self-assembled quantum dots (QDs) by using time-resolved spectroscopy technique with a time resolution of ∼200 fs. We find that carrier capture and relaxation in the ground state of the charged QD are faster compared to the undoped dots even at an excitation level as low as 1× 1010 cm-2. It is attributed to the triggering of the vibrating polarization field induced by the presence of cold carriers in the doped dots. The rate of an electron been captured by a positively charged QD is also calculated based on our proposed model.

原文English
文章編號163117
期刊Applied Physics Letters
88
發行號16
DOIs
出版狀態Published - 17 四月 2006

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