Ultra-Thin Silicon-Dioxide Breakdown Characteristics of MOS Devices with n+ and p+ Polysilicon Gates

S. Holland, I. C. Chen, Chen-Ming Hu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this work we investigate the effect of the gate material on the breakdown characteristics of ultra-thin silicon dioxide films at low voltages (< 6 V). When MOS capacitors are stressed with a positive gate voltage, the charge to breakdown and time to breakdown at a fixed oxide-voltage drop are significantly smaller in p + polysilicon-gate capacitors than in n+ polysilicon-gate capacitors. The results are interpreted in terms of a simple model of hole tunneling resulting from hot-hole generation in the anode by hot electrons entering from the silicon dioxide. Extrapolation of high-voltage-breakdown lifetime measurements for relatively thick-oxide devices to low voltages may be complicated by this mechanism.

原文English
頁(從 - 到)572-575
頁數4
期刊IEEE Electron Device Letters
8
發行號12
DOIs
出版狀態Published - 1 1月 1987

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