Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q BD , interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 angstroms. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.
|出版狀態||Published - 1 一月 1997|
|事件||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
持續時間: 3 六月 1997 → 5 六月 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|期間||3/06/97 → 5/06/97|