Ultra-thin oxide with atomically smooth interfaces

Albert Chin*, W. J. Chen, R. H. Kao, B. C. Lin, T. Chang, C. Tsai, J. C.M. Huang

*此作品的通信作者

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q BD , interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 angstroms. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.

原文English
頁面177-181
頁數5
出版狀態Published - 1 一月 1997
事件Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
持續時間: 3 六月 19975 六月 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, China
期間3/06/975/06/97

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