Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto; H. S. Momose; S. Takagi; K. Yamabe; H. Iwai

doi:10.7567/ssdm.1990.c-8-3

Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto^*, H. S. Momose, S. Takagi, K. Yamabe, H. Iwai

^*此作品的通信作者

國際半導體產業學院

研究成果: Paper › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low V_D and high V_G, most of the channel electrons tunnel into the gate, which reduces I_D. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

原文	English
頁面	361-364
頁數	4
DOIs	https://doi.org/10.7567/ssdm.1990.c-8-3
出版狀態	Published - 1990
事件	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn 持續時間: 22 8月 1990 → 24 8月 1990

Conference

Conference	22nd International Conference on Solid State Devices and Materials
城市	Sendai, Jpn
期間	22/08/90 → 24/08/90

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10.7567/ssdm.1990.c-8-3

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title = "Ultra thin nitride gate MISFET operating with tunneling gate current",

abstract = "The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.",

author = "T. Morimoto and Momose, {H. S.} and S. Takagi and K. Yamabe and H. Iwai",

year = "1990",

doi = "10.7567/ssdm.1990.c-8-3",

language = "English",

pages = "361--364",

note = "null ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - CONF

T1 - Ultra thin nitride gate MISFET operating with tunneling gate current

AU - Morimoto, T.

AU - Momose, H. S.

AU - Takagi, S.

AU - Yamabe, K.

AU - Iwai, H.

PY - 1990

Y1 - 1990

N2 - The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

AB - The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

UR - http://www.scopus.com/inward/record.url?scp=0025564109&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1990.c-8-3

DO - 10.7567/ssdm.1990.c-8-3

M3 - Paper

AN - SCOPUS:0025564109

SP - 361

EP - 364

Y2 - 22 August 1990 through 24 August 1990

ER -

Ultra thin nitride gate MISFET operating with tunneling gate current

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