Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto*, H. S. Momose, S. Takagi, K. Yamabe, H. Iwai

*此作品的通信作者

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

原文English
頁面361-364
頁數4
DOIs
出版狀態Published - 1990
事件22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
持續時間: 22 8月 199024 8月 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
城市Sendai, Jpn
期間22/08/9024/08/90

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