The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.
|出版狀態||Published - 1990|
|事件||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
持續時間: 22 8月 1990 → 24 8月 1990
|Conference||22nd International Conference on Solid State Devices and Materials|
|期間||22/08/90 → 24/08/90|