Ultra-thin Hf0.5Zr0.5Oferroelectric tunnel junction with high current density

Yueh Hua Chu, Hsin Hui Huang, Yu Hao Chen, Chien Hua Hsu, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou*

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density.

原文English
主出版物標題VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665419345
DOIs
出版狀態Published - 19 4月 2021
事件2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
持續時間: 19 4月 202122 4月 2021

出版系列

名字VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
國家/地區Taiwan
城市Hsinchu
期間19/04/2122/04/21

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