Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi; Kazuya Asano; Nick Lindert; Vivek Subramanian; Tsu Jae King; Jeffrey Bokor; Chen-Ming Hu

doi:Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi^*, Kazuya Asano, Nick Lindert, Vivek Subramanian, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

83 引文斯高帕斯（Scopus）

摘要

An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

原文	English
頁（從 - 到）	919-921
頁數	3
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
出版狀態	Published - 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

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title = "Ultra-thin body SOI MOSFET for deep-sub-tenth micron era",

abstract = "An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.",

author = "Choi, {Yang Kyu} and Kazuya Asano and Nick Lindert and Vivek Subramanian and King, {Tsu Jae} and Jeffrey Bokor and Chen-Ming Hu",

year = "1999",

doi = "Ultra-thin body SOI MOSFET for deep-sub-tenth micron era",

language = "English",

pages = "919--921",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

AU - Choi, Yang Kyu

AU - Asano, Kazuya

AU - Lindert, Nick

AU - Subramanian, Vivek

AU - King, Tsu Jae

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

N2 - An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

AB - An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

UR - http://www.scopus.com/inward/record.url?scp=0033314091&partnerID=8YFLogxK

U2 - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

DO - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

M3 - Conference article

AN - SCOPUS:0033314091

SN - 0163-1918

SP - 919

EP - 921

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

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