Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi*, Kazuya Asano, Nick Lindert, Vivek Subramanian, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

83 引文 斯高帕斯(Scopus)

摘要

An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

原文English
頁(從 - 到)919-921
頁數3
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1999
事件1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
持續時間: 5 12月 19998 12月 1999

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