Ultra shallow junctions were formed by plasma doping of boron in n-Si and laser annealing (λ=0.53μm). In the doping process, a two-step doping method in which doping with low B2H6 gas concentration was followed by doping with high B2H6 gas concentration was proposed. It is pointed out that large optical absorption rate in the surface layer of as-doped sample was desirable to achieve shallow junction depth and low sheet resistance of the doped layer after laser annealing. The two-step doping method provided high dose and large optical absorption rate, so that the junction depth of 12-18 nm and sheet resistance of 346-588 Ω/sq. were obtained.
|出版狀態||Published - 2004|
|事件||Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States|
持續時間: 10 五月 2004 → 12 五月 2004
|Conference||Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium|
|城市||San Antonio, TX|
|期間||10/05/04 → 12/05/04|