Ultra shallow P+/N junctions fabricated by plasma doping and all solid state laser annealing

Kazuo Tsutsui*, Yuichiro Sasaki, Cheng Guo Jin, Hideki Tamura, Buji Mizuno, Ryota Higaki, Takahisa Sato, Kenta Majima, Shun Ichiro Ohmi, Hiroshi Iwai

*此作品的通信作者

研究成果: Paper同行評審

3 引文 斯高帕斯(Scopus)

摘要

Ultra shallow junctions were formed by plasma doping of boron in n-Si and laser annealing (λ=0.53μm). In the doping process, a two-step doping method in which doping with low B2H6 gas concentration was followed by doping with high B2H6 gas concentration was proposed. It is pointed out that large optical absorption rate in the surface layer of as-doped sample was desirable to achieve shallow junction depth and low sheet resistance of the doped layer after laser annealing. The two-step doping method provided high dose and large optical absorption rate, so that the junction depth of 12-18 nm and sheet resistance of 346-588 Ω/sq. were obtained.

原文English
頁面106-111
頁數6
出版狀態Published - 2004
事件Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
持續時間: 10 五月 200412 五月 2004

Conference

ConferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
國家/地區United States
城市San Antonio, TX
期間10/05/0412/05/04

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