Method for forming ultra-shallow p+/n is demonstrated for 0.15 μm p-type metal-oxide-semiconductor field-effect transistor (pMOSFET). The approach includes a capping ultra-thin nitride on the source/drain extension regions followed by a low energy source/drain (S/D) extension implantation. Ultra shallow p+/n junctions can be obtained with depth of 27 nm and sheet resistivity of 1007 Ω/□.
|頁（從 - 到）||4519-4520|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 7月 2002|