Ultra-low voltage and low power UWB CMOS LNA using forward body biases

Chih Shiang Chang, Jyh-Chyurn Guo

研究成果: Conference contribution同行評審

16 引文 斯高帕斯(Scopus)

摘要

An ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated using 0.18μm 1.8V CMOS technology. The adoption of forward body biases (FBB) in a 3-stage distributed amplifier enables an aggressive scaling of the supply voltages and gate input voltage to 0.6V. The low voltage feature from FBB leads to more than 50% power consumption saving to 4.2mW. The measured power gain (S 21 ) is higher than 10dB in 3.18.1GHz and noise figure is 2.834.7 dB in the wideband of 210GHz. Superior linearity is achieved with IIP3 as high as 4.2dBm and 12.5dBm at 6.5GHz and 10GHz respectively.

原文English
主出版物標題Proceedings of the 2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
頁面173-176
頁數4
DOIs
出版狀態Published - 9 9月 2013
事件2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013 - Seattle, WA, United States
持續時間: 2 6月 20134 6月 2013

出版系列

名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN(列印)1529-2517

Conference

Conference2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
國家/地區United States
城市Seattle, WA
期間2/06/134/06/13

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