An ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated using 0.18μm 1.8V CMOS technology. The adoption of forward body biases (FBB) in a 3-stage distributed amplifier enables an aggressive scaling of the supply voltages and gate input voltage to 0.6V. The low voltage feature from FBB leads to more than 50% power consumption saving to 4.2mW. The measured power gain (S
) is higher than 10dB in 3.18.1GHz and noise figure is 2.834.7 dB in the wideband of 210GHz. Superior linearity is achieved with IIP3 as high as 4.2dBm and 12.5dBm at 6.5GHz and 10GHz respectively.