@inproceedings{78a06192757047d9a5a9608ac03f3dfe,
title = "Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping",
abstract = "We report an ultra-low specific contact resistivity (ρc) down to 3.2×10-10 Ω-cm2 on in-situ grown boron (B) and surface segregated gallium (Ga) co-doped p+-Si0.5Ge0.5 with a high average active doping concentration (NA) of 1.2×1021 cm-3. Two batches of devices with 8 sets of data using ladder transmission line model (LTLM) were fabricated to confirm the accuracy. We also found, for the first time, that the co-doped Ga not only enhances NA but also plays a vital role in achieving thermally stable Ti/p+-Si0.5Ge0.5 contacts with the thermal budget of up to 450 ℃. A mechanism for the deep understanding of such phenomenon was proposed and experimentally verified.",
keywords = "Ga and B co-doping, In-situ doping, Interface reaction, SiGe, Specific contact resistivity",
author = "Haiwen Xu and Xinke Wang and Sheng Luo and Jishen Zhang and Kaizhen Han and Chen Sun and Chengkuan Wang and Rami Khazaka and Qi Xie and Yi Huang and Yi Zhou and Jiaqing He and Gengchiau Liang and Xiao Gong",
note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",
year = "2021",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",
address = "美國",
}