@inproceedings{80dc4e0ed17b4f298e2e30a40e9cf046,
title = "Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications",
abstract = "In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm2 bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.",
keywords = "3D IC, Cu to Cu Bonding, Low Temperature Bonding",
author = "Hong, {Zhong Jie} and Demin Liu and Hu, {Han Wen} and Lin, {Ming Chang} and Hsieh, {Tsau Hua} and Chen, {Kuan Neng}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 71st IEEE Electronic Components and Technology Conference, ECTC 2021 ; Conference date: 01-06-2021 Through 04-07-2021",
year = "2021",
doi = "10.1109/ECTC32696.2021.00065",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "347--352",
booktitle = "Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021",
address = "美國",
}