Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Zhen Hong Huang, Wei Syuan Lin, Ting Chun Lo, Shun Wei Tang, Szu Chia Chen, Dirk Wellekens, Matteo Borga, Niels Posthuma, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

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Keyphrases

Engineering