Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Zhen Hong Huang, Wei Syuan Lin, Ting Chun Lo, Shun Wei Tang, Szu Chia Chen, Dirk Wellekens, Matteo Borga, Niels Posthuma, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.

原文English
主出版物標題35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面139-142
頁數4
ISBN(電子)9798350396829
DOIs
出版狀態Published - 2023
事件35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 - Hong Kong, China
持續時間: 28 5月 20231 6月 2023

出版系列

名字Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2023-May
ISSN(列印)1063-6854

Conference

Conference35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
國家/地區China
城市Hong Kong
期間28/05/231/06/23

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