Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Zhen Hong Huang; Wei Syuan Lin; Ting Chun Lo; Shun Wei Tang; Szu Chia Chen; Dirk Wellekens; Matteo Borga; Niels Posthuma; Benoit Bakeroot; Stefaan Decoutere; Tian Li Wu

doi:10.1109/ISPSD57135.2023.10147734

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Zhen Hong Huang, Wei Syuan Lin, Ting Chun Lo, Shun Wei Tang, Szu Chia Chen, Dirk Wellekens, Matteo Borga, Niels Posthuma, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.

原文	English
主出版物標題	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	139-142
頁數	4
ISBN（電子）	9798350396829
DOIs	https://doi.org/10.1109/ISPSD57135.2023.10147734
出版狀態	Published - 2023
事件	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 - Hong Kong, 中國持續時間: 28 5月 2023 → 1 6月 2023

出版系列

名字	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
卷	2023-May
ISSN（列印）	1063-6854

Conference

Conference	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
國家/地區	中國
城市	Hong Kong
期間	28/05/23 → 1/06/23

存取文件

10.1109/ISPSD57135.2023.10147734

其它文件與鏈接

Link to publication in Scopus

引用此

Huang, Z. H., Lin, W. S., Lo, T. C., Tang, S. W., Chen, S. C., Wellekens, D., Borga, M., Posthuma, N., Bakeroot, B., Decoutere, S., & Wu, T. L. (2023). Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs. 於 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 (頁 139-142). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 卷 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD57135.2023.10147734

Huang, Zhen Hong ; Lin, Wei Syuan ; Lo, Ting Chun 等. / Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs. 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. 頁 139-142 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{f2dd6362e4214256853acb0777a53de1,

title = "Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs",

abstract = "Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.",

keywords = "TCAD simulation, hole injection/trapping, p-GaN HEMT, ultra-fast stress",

author = "Huang, {Zhen Hong} and Lin, {Wei Syuan} and Lo, {Ting Chun} and Tang, {Shun Wei} and Chen, {Szu Chia} and Dirk Wellekens and Matteo Borga and Niels Posthuma and Benoit Bakeroot and Stefaan Decoutere and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 ; Conference date: 28-05-2023 Through 01-06-2023",

year = "2023",

doi = "10.1109/ISPSD57135.2023.10147734",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "139--142",

booktitle = "35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023",

address = "美國",

}

Huang, ZH, Lin, WS, Lo, TC, Tang, SW, Chen, SC, Wellekens, D, Borga, M, Posthuma, N, Bakeroot, B, Decoutere, S & Wu, TL 2023, Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs. 於 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 卷 2023-May, Institute of Electrical and Electronics Engineers Inc., 頁 139-142, 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023, Hong Kong, 中國, 28/05/23. https://doi.org/10.1109/ISPSD57135.2023.10147734

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs. / Huang, Zhen Hong; Lin, Wei Syuan; Lo, Ting Chun 等.
35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 139-142 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 卷 2023-May).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

AU - Huang, Zhen Hong

AU - Lin, Wei Syuan

AU - Lo, Ting Chun

AU - Tang, Shun Wei

AU - Chen, Szu Chia

AU - Wellekens, Dirk

AU - Borga, Matteo

AU - Posthuma, Niels

AU - Bakeroot, Benoit

AU - Decoutere, Stefaan

AU - Wu, Tian Li

PY - 2023

Y1 - 2023

N2 - Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.

AB - Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.

KW - TCAD simulation

KW - hole injection/trapping

KW - p-GaN HEMT

KW - ultra-fast stress

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U2 - 10.1109/ISPSD57135.2023.10147734

DO - 10.1109/ISPSD57135.2023.10147734

M3 - Conference contribution

AN - SCOPUS:85163433099

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 139

EP - 142

BT - 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

Y2 - 28 May 2023 through 1 June 2023

ER -

Huang ZH, Lin WS, Lo TC, Tang SW, Chen SC, Wellekens D 等. Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs. 於 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 139-142. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD57135.2023.10147734

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

摘要

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Conference

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