U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming Hung Wu; Ming Chun Hong; Ching Shih; Yao Jen Chang; Yu Chen Hsin; Shih Ching Chiu; Kuan Ming Chen; Yi Hui Su; Chih Yao Wang; Shan Yi Yang; Guan Long Chen; Hsin Han Lee; Sk Ziaur Rahaman; I. Jung Wang; Chen Yi Shih; Tsun Chun Chang; Jeng Hua Wei; Shyh Shyuan Sheu; Wei Chung Lo; Shih Chieh Chang; Tuo Hung Hou

doi:10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming Hung Wu^*
, Ming Chun Hong
, Ching Shih
, Yao Jen Chang
, Yu Chen Hsin
, Shih Ching Chiu
, Kuan Ming Chen
, Yi Hui Su
, Chih Yao Wang
, Shan Yi Yang
, Guan Long Chen
, Hsin Han Lee
, Sk Ziaur Rahaman
, I. Jung Wang
, Chen Yi Shih
, Tsun Chun Chang
, Jeng Hua Wei
, Shyh Shyuan Sheu
, Wei Chung Lo
, Shih Chieh Chang

Tuo Hung Hou^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

原文	English
主出版物標題	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336
出版狀態	Published - 2023
事件	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, 日本持續時間: 11 6月 2023 → 16 6月 2023

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2023-June
ISSN（列印）	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區	日本
城市	Kyoto
期間	11/06/23 → 16/06/23

存取文件

10.23919/VLSITechnologyandCir57934.2023.10185336

其它文件與鏈接

Link to publication in Scopus

引用此

Wu, M. H., Hong, M. C., Shih, C., Chang, Y. J., Hsin, Y. C., Chiu, S. C., Chen, K. M., Su, Y. H., Wang, C. Y., Yang, S. Y., Chen, G. L., Lee, H. H., Rahaman, S. Z., Wang, I. J., Shih, C. Y., Chang, T. C., Wei, J. H., Sheu, S. S., Lo, W. C., ... Hou, T. H. (2023). U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336

Wu, Ming Hung ; Hong, Ming Chun ; Shih, Ching 等. / U-MRAM : Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{5599a6be72de42fca89f78b35ec6445c,

title = "U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory",

abstract = "U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.",

author = "Wu, \{Ming Hung\} and Hong, \{Ming Chun\} and Ching Shih and Chang, \{Yao Jen\} and Hsin, \{Yu Chen\} and Chiu, \{Shih Ching\} and Chen, \{Kuan Ming\} and Su, \{Yi Hui\} and Wang, \{Chih Yao\} and Yang, \{Shan Yi\} and Chen, \{Guan Long\} and Lee, \{Hsin Han\} and Rahaman, \{Sk Ziaur\} and Wang, \{I. Jung\} and Shih, \{Chen Yi\} and Chang, \{Tsun Chun\} and Wei, \{Jeng Hua\} and Sheu, \{Shyh Shyuan\} and Lo, \{Wei Chung\} and Chang, \{Shih Chieh\} and Hou, \{Tuo Hung\}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185336",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",

address = "美國",

}

Wu, MH, Hong, MC, Shih, C, Chang, YJ, Hsin, YC, Chiu, SC, Chen, KM, Su, YH, Wang, CY, Yang, SY, Chen, GL, Lee, HH, Rahaman, SZ, Wang, IJ, Shih, CY, Chang, TC, Wei, JH, Sheu, SS, Lo, WC, Chang, SC & Hou, TH 2023, U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, 日本, 11/06/23. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. / Wu, Ming Hung; Hong, Ming Chun; Shih, Ching 等.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - U-MRAM

T2 - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

AU - Wu, Ming Hung

AU - Hong, Ming Chun

AU - Shih, Ching

AU - Chang, Yao Jen

AU - Hsin, Yu Chen

AU - Chiu, Shih Ching

AU - Chen, Kuan Ming

AU - Su, Yi Hui

AU - Wang, Chih Yao

AU - Yang, Shan Yi

AU - Chen, Guan Long

AU - Lee, Hsin Han

AU - Rahaman, Sk Ziaur

AU - Wang, I. Jung

AU - Shih, Chen Yi

AU - Chang, Tsun Chun

AU - Wei, Jeng Hua

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Chang, Shih Chieh

AU - Hou, Tuo Hung

PY - 2023

Y1 - 2023

N2 - U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

AB - U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

UR - https://www.scopus.com/pages/publications/85167601282

U2 - 10.23919/VLSITechnologyandCir57934.2023.10185336

DO - 10.23919/VLSITechnologyandCir57934.2023.10185336

M3 - Conference contribution

AN - SCOPUS:85167601282

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 June 2023 through 16 June 2023

ER -

Wu MH, Hong MC, Shih C, Chang YJ, Hsin YC, Chiu SC 等. U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

摘要

出版系列

Conference

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其它文件與鏈接

指紋

引用此