U-MOS POWER FET.

Daisuke Ueda*, Hiromitsu Takagi, Kazuyoshi Kitamura, Goryo Hagio, Masaru Nahara

*此作品的通信作者

研究成果: Article同行評審

摘要

Because of high-speed performance superior to bipolar power transistors, power MOSFETs have become a promising device in a variety of power electronic equipment. A new U-grooved vertical power MOSFET with fast-switching and high-frequency characteristics has been developed. The processing technology and design philosophy of the new FETs are described.

原文English
頁(從 - 到)335-342
頁數8
期刊National technical report
29
發行號2
出版狀態Published - 1 1月 1983

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