U-MOS POWER FET.

Daisuke Ueda; Hiromitsu Takagi; Kazuyoshi Kitamura; Goryo Hagio; Masaru Nahara

U-MOS POWER FET.

Daisuke Ueda^*, Hiromitsu Takagi, Kazuyoshi Kitamura, Goryo Hagio, Masaru Nahara

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

摘要

Because of high-speed performance superior to bipolar power transistors, power MOSFETs have become a promising device in a variety of power electronic equipment. A new U-grooved vertical power MOSFET with fast-switching and high-frequency characteristics has been developed. The processing technology and design philosophy of the new FETs are described.

原文	English
頁（從 - 到）	335-342
頁數	8
期刊	National technical report
卷	29
發行號	2
出版狀態	Published - 1 1月 1983

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title = "U-MOS POWER FET.",

abstract = "Because of high-speed performance superior to bipolar power transistors, power MOSFETs have become a promising device in a variety of power electronic equipment. A new U-grooved vertical power MOSFET with fast-switching and high-frequency characteristics has been developed. The processing technology and design philosophy of the new FETs are described.",

author = "Daisuke Ueda and Hiromitsu Takagi and Kazuyoshi Kitamura and Goryo Hagio and Masaru Nahara",

year = "1983",

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journal = "National technical report",

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T1 - U-MOS POWER FET.

AU - Ueda, Daisuke

AU - Takagi, Hiromitsu

AU - Kitamura, Kazuyoshi

AU - Hagio, Goryo

AU - Nahara, Masaru

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Because of high-speed performance superior to bipolar power transistors, power MOSFETs have become a promising device in a variety of power electronic equipment. A new U-grooved vertical power MOSFET with fast-switching and high-frequency characteristics has been developed. The processing technology and design philosophy of the new FETs are described.

AB - Because of high-speed performance superior to bipolar power transistors, power MOSFETs have become a promising device in a variety of power electronic equipment. A new U-grooved vertical power MOSFET with fast-switching and high-frequency characteristics has been developed. The processing technology and design philosophy of the new FETs are described.

UR - http://www.scopus.com/inward/record.url?scp=0020734537&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020734537

VL - 29

SP - 335

EP - 342

JO - National technical report

JF - National technical report

SN - 0028-0291

IS - 2

ER -

U-MOS POWER FET.

摘要

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