Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

Keyphrases

• Non-volatile 100%
• Field-effect Transistors 100%
• Transistor 100%
• Compact Modeling 100%
• Metal-ferroelectric-metal 100%
• I-compact 100%
• Low-voltage Operation 33%
• Compact Model 16%
• Back-end-of-line 16%
• Charge Density 16%
• Memory Cell 16%
• Memory Array 16%
• Static Random Access Memory 16%
• Ferroelectric Memory 16%
• Cell Array 16%
• Operating Principle 16%
• Polarization Charge 16%
• Process Compatibility 16%
• Low Polarization 16%
• Design Space 16%
• High Retention 16%
• Area Density 16%
• Write Disturbance 16%
• Embedded Nonvolatile Memory (eNVM) 16%
• Logical Node 16%

Material Science

• Ferroelectric Material 100%
• Transistor 100%
• Field Effect Transistor 100%
• Density 28%

Engineering

• Field-Effect Transistor 100%
• Operating Voltage 33%
• Nodes 16%
• Charge Density 16%
• Nonvolatile Memory 16%
• Memory Array 16%
• Random Access Memory 16%
• Cell Array 16%
• Design Space 16%
• Area Density 16%
• Operation Principle 16%