TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

Hiroshi Iwai*, Kenji Taniguchi, Masami Konaka, Satoshi Maeda, Yoshio Nishi

*此作品的通信作者

研究成果: Conference article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.

原文English
頁(從 - 到)728-731
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1980
事件Tech Dig Int Electron Devices Meet - Washington, DC, USA
持續時間: 8 12月 198010 12月 1980

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