Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

Hiroshi Iwai, Satoshi Maeda, Yoshio Nishi

研究成果: Article同行評審

摘要

Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.

原文English
頁(從 - 到)255-260
頁數6
期刊IEEE Journal of Solid-State Circuits
17
發行號2
DOIs
出版狀態Published - 4月 1982

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