Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

Hiroshi Iwai; Kenji Taniguchi; Masami Konaka; Satoshi Maeda; Yoshio Nishi

doi:10.1109/T-ED.1982.20754

Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

Hiroshi Iwai, Kenji Taniguchi, Masami Konaka, Satoshi Maeda, Yoshio Nishi

國際半導體產業學院

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.

原文	English
頁（從 - 到）	625-630
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	29
發行號	4
DOIs	https://doi.org/10.1109/T-ED.1982.20754
出版狀態	Published - 4月 1982

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10.1109/T-ED.1982.20754

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AU - Nishi, Yoshio

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AB - Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.

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Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

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