Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage

Po Yi Kuo, Chien Min Chang, I. Han Liu, Po-Tsun Liu*

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI thickness, a-IWO channel thickness, and channel lengths on the a-IWO NS JL transistors (a-IWO NS-JLTs) have been studied for the purposes of low operation voltage (gate voltage ≤2V) and high performance. The 2D-like a-IWO NS-JLTs exhibit low operation voltage, low source/drain (S/D) contact resistance (R C ) and other key electrical characteristics, such as high field-effect mobility (μ FE ), near ideal subthreshold swing (S.S.), and large ON/OFF currents ratio (I ON /I OFF ). The remarkable device characteristics also make the proposed 2D-like a-IWO NS-JLTs promising for system-on-panel (SoP) and vertically stacked (VS) hybrid CMOS applications.

原文English
文章編號7579
頁數7
期刊Scientific reports
9
發行號1
DOIs
出版狀態Published - 20 5月 2019

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