Two-Dimensional Computer Simulation Models for MOSLSI Fabrication Processes

Kenji Taniguchi, Masahiro Kashiwagi, Hiroshi Iwai

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

A two-dimensional process simulation program has been developed. The process models used for this program are oxidation, diffusion, ion implantation, and deposition/etching of CVD films. The numerical models are based on a finite-difference approximation to diffusion equation. A large number of equations derived from the diffusion equation are solved by Stone's method because of its excellent rate of convergence. Attention is paid primarily to lateral impurity diffusion and lateral oxidation near the edge of the oxidation mask. Oxidation enhanced diffusion of boron is also included. We have obtained good quantitative agreement between calculated and experimentally observed diffused line capacitance variation with reverse bias voltage which is strongly affected by the lateral channel stop diffusion in a locally oxidized process.

原文English
頁(從 - 到)574-580
頁數7
期刊IEEE Transactions on Electron Devices
28
發行號5
DOIs
出版狀態Published - 5月 1981

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