Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Z. A. Su*, J. H. Huang, L. Z. Hsieh, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×1019 cm-3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800°C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters.

原文English
頁(從 - 到)1984-1986
頁數3
期刊Applied Physics Letters
72
發行號16
DOIs
出版狀態Published - 1 12月 1998

指紋

深入研究「Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy」主題。共同形成了獨特的指紋。

引用此