Two-bit/four-level Pr2O3 trapping layer for silicon-oxide-nitride-oxide-silicon-type flash memory

Yu Hsien Lin*, Hsin Chiang You, Chao-Hsin Chien

*此作品的通信作者

    研究成果: Article同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    This study proposes and demonstrates a silicon-oxide-nitride-oxide-silicon (SONOS)-type memory device based on a high-k dielectric praseodymium oxide (Pr2O3) trapping layer. In the proposed design, channel hot electron injection programming and band-to-band hot-hole injection erasing allow highly efficient two-bit and four-level device operation. The proposed design also has a total memory window of 5 V, a ten-year Vt retention window larger than 0.8 V between adjacent levels, and enough memory window for 105 programming/erasing cycles of endurance. The proposed SONOS-type Pr2O3 trapping layer flash memory exhibits large memory windows, high program/erase speed, good endurance, and good disturbance characteristics.

    原文English
    文章編號011201
    期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
    30
    發行號1
    DOIs
    出版狀態Published - 1 一月 2012

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