Tunneling measurements of fluctuation effects near the superconductor to insulator transition

Shih-ying Hsu, James A. Chervenak, James M. Valles

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2 引文 斯高帕斯(Scopus)

摘要

We present measurements of the temperature dependence of the tunneling density of states near the Fermi energy, G0(T), and resistive transitions, R(T), of ultrathin PbBi films. Both R(T) and G0(T) broaden substantially near the superconductor to insulator transition (SIT). The broadening in R(T) is not affected by the proximity of a ground plane suggesting that long range Coulomb interactions are not important to the SIT. The results suggest that the transport properties of films near the SIT are influenced by fluctuations in both the phase and the amplitude of the order parameter. We discuss the data in terms of recent theories of the superconducting transition in low superfluid density systems.

原文English
頁(從 - 到)2065-2067
頁數3
期刊Journal of Physics and Chemistry of Solids
59
發行號10-12
DOIs
出版狀態Published - 1 1月 1998

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