Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

Artur Useinov*, R. G. Deminov, N. Kh Useinov, L. R. Tagirov

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given.

原文English
頁(從 - 到)1797-1801
頁數5
期刊Physica Status Solidi (B) Basic Research
247
發行號7
DOIs
出版狀態Published - 1 7月 2010

指紋

深入研究「Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions」主題。共同形成了獨特的指紋。

引用此