Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

Artur Useinov*, Chih Huang Lai

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell (TC)-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondo-induced TMR anomalies in nanometer-sized tunnel junctions.

原文English
文章編號1650001
期刊SPIN
6
發行號1
DOIs
出版狀態Published - 1 1月 2016

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