Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by a cyclic atomic layer reduction technique

Si Yong Gu, Chien Te Hsieh*, Tzu Wei Lin, Jeng-Kuei Chang, Jianlin Li, Yasser Ashraf Gandomi

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The present work develops an atomic layer reduction (ALR) method to accurately tune oxidation level, electrical conductance, band-gap structure, and photoluminescence (PL) response of graphene oxide (GO) sheets. The ALR route is carried out at 200 °C within ALR cycle number of 10–100. The ALR treatment is capable of striping surface functionalities (e.g., hydroxyl, carbonyl, and carboxylic groups), producing thermally-reduced GO sheets. The ALR cycle number serves as a controlling factor in adjusting the crystalline, surface chemistry, electrical, optical properties of GO sheets. With increasing the ALR cycle number, ALR-GO sheets display a high crystallinity, a low oxidation level, an improved electrical conductivity, a narrow band gap, and a tunable PL response. On the basis of the results, the ALR technique offers a great potential for accurately tune electrical and optical properties of carbon materials through the cyclic removal of oxygen functionalities, without any complicated thermal and chemical desorption processes.

原文English
頁(從 - 到)234-241
頁數8
期刊Carbon
137
DOIs
出版狀態Published - 1 10月 2018

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