Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, C. J. Chu, Fu-Ming Pan, W. Lur, S. M. Szeb

*此作品的通信作者

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

原文English
頁(從 - 到)F145-F148
期刊Journal of the Electrochemical Society
149
發行號10
DOIs
出版狀態Published - 10月 2002

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