Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network: Si-cluster surrounded SiO 2 is quite unique

Hiroshi Watanabe*, Kenji Kawabata, Takashi Ichikawa

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.

原文English
主出版物標題SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
出版狀態Published - 1 12月 2009
事件SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, 美國
持續時間: 9 9月 200911 9月 2009

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
國家/地區美國
城市San Diego, CA
期間9/09/0911/09/09

指紋

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