@inproceedings{baaec496a8da49c6b5bfddb3e758424f,
title = "Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network: Si-cluster surrounded SiO 2 is quite unique",
abstract = "A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.",
keywords = "Component, Floating-gate, Interfacial-states, Molecular-dynamics, Sidot, Tight-binding",
author = "Hiroshi Watanabe and Kenji Kawabata and Takashi Ichikawa",
year = "2009",
month = dec,
day = "1",
doi = "10.1109/SISPAD.2009.5290217",
language = "English",
isbn = "9781424439492",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
booktitle = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices",
note = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",
}