Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics

Wei Liang Lin; Jen Chung Lou; Yao Jen Lee; Tien-Sheng Chao

doi:10.1109/IPFA.2009.5232685

Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics

Wei Liang Lin^*, Jen Chung Lou, Yao Jen Lee, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

DNBTI on Hf02 and HfSiON has been investigated. The DNBTI model under NBTIIpassivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.

原文	English
主出版物標題	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
頁面	122-125
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2009.5232685
出版狀態	Published - 16 11月 2009
事件	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China 持續時間: 6 7月 2009 → 10 7月 2009

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
國家/地區	China
城市	Suzhou
期間	6/07/09 → 10/07/09

存取文件

10.1109/IPFA.2009.5232685

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, W. L., Lou, J. C., Lee, Y. J., & Chao, T-S. (2009). Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. 於 Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (頁 122-125). [5232685] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232685

Lin, Wei Liang ; Lou, Jen Chung ; Lee, Yao Jen 等. / Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. 頁 122-125 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{d7a4d4fe67334c07b2195945561e596a,

title = "Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics",

abstract = "DNBTI on Hf02 and HfSiON has been investigated. The DNBTI model under NBTIIpassivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.",

author = "Lin, {Wei Liang} and Lou, {Jen Chung} and Lee, {Yao Jen} and Tien-Sheng Chao",

year = "2009",

month = nov,

day = "16",

doi = "10.1109/IPFA.2009.5232685",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "122--125",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "null ; Conference date: 06-07-2009 Through 10-07-2009",

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Lin, WL, Lou, JC, Lee, YJ & Chao, T-S 2009, Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. 於 Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232685, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 頁 122-125, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232685

Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. / Lin, Wei Liang; Lou, Jen Chung; Lee, Yao Jen 等.

Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 122-125 5232685 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

研究成果: Conference contribution › 同行評審

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PY - 2009/11/16

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Lin WL, Lou JC, Lee YJ, Chao T-S. Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. 於 Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 122-125. 5232685. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232685