Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics

Wei Liang Lin; Yao Jen Lee; Wen Cheng Lo; King Sheng Chen; Y. T. Hou; K. C. Lin; Tien-Sheng Chao

doi:10.1109/IPFA.2008.4588199

Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics

Wei Liang Lin^*, Yao Jen Lee, Wen Cheng Lo, King Sheng Chen, Y. T. Hou, K. C. Lin, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

PBTI degradation for HfO ₂ and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV _TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO ₂ . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO ₂ dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO ₂ gate dielectrics.

原文	English
主出版物標題	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588199
出版狀態	Published - 23 9月 2008
事件	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore 持續時間: 7 7月 2008 → 11 7月 2008

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
國家/地區	Singapore
城市	Singapore
期間	7/07/08 → 11/07/08

存取文件

10.1109/IPFA.2008.4588199

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, W. L., Lee, Y. J., Lo, W. C., Chen, K. S., Hou, Y. T., Lin, K. C., & Chao, T-S. (2008). Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. 於 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA [4588199] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588199

Lin, Wei Liang ; Lee, Yao Jen ; Lo, Wen Cheng 等. / Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{f1e556d3aa0542c99c51bb884c36c112,

title = "Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics",

abstract = " PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics. ",

author = "Lin, {Wei Liang} and Lee, {Yao Jen} and Lo, {Wen Cheng} and Chen, {King Sheng} and Hou, {Y. T.} and Lin, {K. C.} and Tien-Sheng Chao",

year = "2008",

month = sep,

day = "23",

doi = "10.1109/IPFA.2008.4588199",

language = "English",

isbn = "1424420393",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "null ; Conference date: 07-07-2008 Through 11-07-2008",

}

Lin, WL, Lee, YJ, Lo, WC, Chen, KS, Hou, YT, Lin, KC & Chao, T-S 2008, Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. 於 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588199, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 7/07/08. https://doi.org/10.1109/IPFA.2008.4588199

Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. / Lin, Wei Liang; Lee, Yao Jen; Lo, Wen Cheng 等.

2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588199 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics

AU - Lin, Wei Liang

AU - Lee, Yao Jen

AU - Lo, Wen Cheng

AU - Chen, King Sheng

AU - Hou, Y. T.

AU - Lin, K. C.

AU - Chao, Tien-Sheng

PY - 2008/9/23

Y1 - 2008/9/23

N2 - PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics.

AB - PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics.

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M3 - Conference contribution

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SN - 1424420393

SN - 9781424420391

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Lin WL, Lee YJ, Lo WC, Chen KS, Hou YT, Lin KC 等. Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. 於 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588199. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2008.4588199