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Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN
Wen Cheng Ke, Fang Wei Lee, Cheng Yi Yang,
Wei-Kuo Chen
, Hao Ping Huang
電子物理學系
影像與生醫光電研究所
研究成果
:
Article
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同行評審
4
引文 斯高帕斯(Scopus)
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深入研究「Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN」主題。共同形成了獨特的指紋。
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Keyphrases
Ohmic Contact
100%
P-GaN
100%
Nanodots
100%
Trap-assisted Tunneling
100%
Aluminum-doped ZnO
100%
Indium Oxynitride
100%
GaN Films
50%
Annealing
20%
Carrier Transport
20%
Positive Charge
20%
Activation Energy
10%
Tunneling
10%
Hopping Mechanism
10%
Oxygen Vacancy
10%
Oxygen Atmosphere
10%
Specific Contact Resistance
10%
High Density
10%
Charge Accumulation
10%
X-ray Photoemission Spectroscopy
10%
I-V Curve
10%
Trap Site
10%
Transparent Conductive Layer
10%
Formation Method
10%
Depletion Layer
10%
Contact Formation
10%
Non-Ohmic
10%
RF Sputtering Method
10%
Oxygen Vacancy Defects
10%
Hopping Transport
10%
Anti-surfactant
10%
Material Science
Indium
100%
ZnO
100%
Aluminum
100%
Oxynitride
100%
Nanodots
100%
Film
50%
Density
20%
Oxygen Vacancy
20%
Carrier Transport
20%
X-Ray Photoelectron Spectroscopy
10%
Activation Energy
10%
Magnetron Sputtering
10%
Contact Resistance
10%
Current-Voltage Characteristic
10%
Vacancy Defect
10%
Physics
Quantum Dot
100%
Indium
100%
Oxynitrides
100%
Oxygen Vacancy
20%
Activation Energy
10%
Magnetron Sputtering
10%
Photoelectric Emission
10%
Vacancy Defect
10%
Chemical Engineering
Indium
100%
Film
55%
Magnetron Sputtering
11%