The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.
|出版狀態||Published - 1 12月 2010|
|事件||17th International Display Workshops, IDW'10 - Fukuoka, Japan|
持續時間: 1 12月 2010 → 3 12月 2010
|Conference||17th International Display Workshops, IDW'10|
|期間||1/12/10 → 3/12/10|