Transportation model establishment of InGaZnO for thin film transistor device application

Li Feng Teng; Po-Tsun Liu; Yi Teh Chou; Yang Shun Fan

Transportation model establishment of InGaZnO for thin film transistor device application

Li Feng Teng^*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased I_off and large V_th shifts, while N₂ and O₂ ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.

原文	English
頁面	1845-1847
頁數	3
出版狀態	Published - 1 12月 2010
事件	17th International Display Workshops, IDW'10 - Fukuoka, Japan 持續時間: 1 12月 2010 → 3 12月 2010

Conference

Conference	17th International Display Workshops, IDW'10
國家/地區	Japan
城市	Fukuoka
期間	1/12/10 → 3/12/10

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "Transportation model establishment of InGaZnO for thin film transistor device application",

abstract = "The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.",

author = "Teng, {Li Feng} and Po-Tsun Liu and Chou, {Yi Teh} and Fan, {Yang Shun}",

year = "2010",

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day = "1",

language = "English",

pages = "1845--1847",

note = "null ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Transportation model establishment of InGaZnO for thin film transistor device application

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Fan, Yang Shun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.

AB - The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.

UR - http://www.scopus.com/inward/record.url?scp=79956323444&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956323444

SP - 1845

EP - 1847

Y2 - 1 December 2010 through 3 December 2010

ER -

Transportation model establishment of InGaZnO for thin film transistor device application

摘要

Conference

其它文件與鏈接

指紋

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