Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Firman Mangasa Simanjuntak; Takeo Ohno; Kana Minami; Seiji Samukawa

doi:10.35848/1347-4065/ac762e

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Firman Mangasa Simanjuntak, Takeo Ohno, Kana Minami, Seiji Samukawa

電信工程研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

原文	English
文章編號	SM1010
期刊	Japanese journal of applied physics
卷	61
發行號	SM
DOIs	https://doi.org/10.35848/1347-4065/ac762e
出版狀態	Published - 1 10月 2022

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10.35848/1347-4065/ac762e

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AU - Simanjuntak, Firman Mangasa

AU - Ohno, Takeo

AU - Minami, Kana

AU - Samukawa, Seiji

PY - 2022/10/1

Y1 - 2022/10/1

N2 - In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

AB - In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

KW - ReRAM

KW - ZnO

KW - material

KW - memristor

KW - plasma

KW - transparent

KW - treatment

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Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

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