Transparent planar indium tin oxide for a thermo-photovoltaic selective emitter

Yu-Bin Chen, Parag Parashar, Yi-Hua Yang, Tejender Singh Rawat, Shih-Wei Chen, Chang-Hong Shen, Da-Chiang Chang, Jia-Ming Shieh, Pei-Chen Yu, Tseung-Yuen Tseng, Albert S. Lin*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Designing an efficient emitter design is an important step for achieving a highly efficient TPV conversion process. Wavelength-selective emissivity, spectra match between the emitter and TPV cells, and high thermal stability are three main characteristics that must be considered before implementing the emitter. In this work, an indium tin oxide (ITO)/sapphire emitter structure is investigated for TPV application over the temperature range from 200 degrees C to 1000 degrees C. A 1-mu m-thick ITO layer is deposited on a 650-mu m-thick sapphire substrate. In addition, 50-nm-thick SiO2 is deposited on top of the ITO to enhance the performance of emitter at high temperatures. High-temperature emissivity and absorptivity measurement of the emitter samples are obtained using FTIR and a Hitachi U-4100 spectrophotometer, respectively. The resultant SiO2/ITO/sapphire/stainless-steel planar emitter structure has selective emission with high emissivity of similar to 0.8 in the 1-1.6 mu m wavelength regime at 1000 degrees C. This emission range lies at the bandgap edge of silicon TPV cells and thus can be used to harness the true potential for making a low-cost thermophotovoltaic system. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

原文English
頁(從 - 到)2330-2344
頁數15
期刊Optical Materials Express
10
發行號9
DOIs
出版狀態Published - 1 9月 2020

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