Transient device simulation of trap-assisted leakage in non-volatile memory cell

Hiroshi Watanabe

doi:10.1109/SISPAD.2008.4648233

Transient device simulation of trap-assisted leakage in non-volatile memory cell

Hiroshi Watanabe^*

^*此作品的通信作者

電機工程學系

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In order to study how a local trap degrades data retention characteristics of floating gate nonvolatile memory cell, a general-purpose Single-Electron Device Simulator (SEDS) developed for Si-dot is improved to carry out a very wide range transient analysis from 0.1 pico-seconds to 10 years. As a result, it is found that the data retention is degraded by the direct tunneling enhanced due to positive charge stored at the trap inside the inter-poly dielectric but not by trap-assisted tunneling.

原文	English
頁面	45-48
頁數	4
DOIs	https://doi.org/10.1109/SISPAD.2008.4648233
出版狀態	Published - 1 12月 2008
事件	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan 持續時間: 9 9月 2008 → 11 9月 2008

Conference

Conference	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
國家/地區	Japan
城市	Hakone
期間	9/09/08 → 11/09/08

存取文件

10.1109/SISPAD.2008.4648233

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Link to publication in Scopus

引用此

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abstract = "In order to study how a local trap degrades data retention characteristics of floating gate nonvolatile memory cell, a general-purpose Single-Electron Device Simulator (SEDS) developed for Si-dot is improved to carry out a very wide range transient analysis from 0.1 pico-seconds to 10 years. As a result, it is found that the data retention is degraded by the direct tunneling enhanced due to positive charge stored at the trap inside the inter-poly dielectric but not by trap-assisted tunneling.",

keywords = "Device-simulation, Local trap, Nonvolatile memory, Transient analysis",

author = "Hiroshi Watanabe",

year = "2008",

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doi = "10.1109/SISPAD.2008.4648233",

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AU - Watanabe, Hiroshi

PY - 2008/12/1

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N2 - In order to study how a local trap degrades data retention characteristics of floating gate nonvolatile memory cell, a general-purpose Single-Electron Device Simulator (SEDS) developed for Si-dot is improved to carry out a very wide range transient analysis from 0.1 pico-seconds to 10 years. As a result, it is found that the data retention is degraded by the direct tunneling enhanced due to positive charge stored at the trap inside the inter-poly dielectric but not by trap-assisted tunneling.

AB - In order to study how a local trap degrades data retention characteristics of floating gate nonvolatile memory cell, a general-purpose Single-Electron Device Simulator (SEDS) developed for Si-dot is improved to carry out a very wide range transient analysis from 0.1 pico-seconds to 10 years. As a result, it is found that the data retention is degraded by the direct tunneling enhanced due to positive charge stored at the trap inside the inter-poly dielectric but not by trap-assisted tunneling.

KW - Device-simulation

KW - Local trap

KW - Nonvolatile memory

KW - Transient analysis

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DO - 10.1109/SISPAD.2008.4648233

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T2 - 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008

Y2 - 9 September 2008 through 11 September 2008

ER -

Transient device simulation of trap-assisted leakage in non-volatile memory cell

摘要

Conference

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