Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO 2 interface

J. R. Tsai*, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, Horng-Chih Lin, J. P. Lin, W. S. Feng, R. D. Chang

*此作品的通信作者

    研究成果: Conference article同行評審

    2 引文 斯高帕斯(Scopus)

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    Keyphrases

    Engineering

    Material Science

    Physics