摘要
Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.
原文 | English |
---|---|
頁(從 - 到) | 979-982 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
出版狀態 | Published - 2004 |
事件 | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, 美國 持續時間: 13 12月 2004 → 15 12月 2004 |