Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO 2 interface

J. R. Tsai*, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, Horng-Chih Lin, J. P. Lin, W. S. Feng, R. D. Chang

*此作品的通信作者

    研究成果: Conference article同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.

    原文English
    頁(從 - 到)979-982
    頁數4
    期刊Technical Digest - International Electron Devices Meeting, IEDM
    DOIs
    出版狀態Published - 2004
    事件IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
    持續時間: 13 12月 200415 12月 2004

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