To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment

Chein Hao Chen*, Yean Kuen Fang, Chih Wei Yang, Shyh Fann Ting, Yong Shiuan Tsair, Ming Fang Wang, Tuo-Hung Hou, Mo Chiun Yu, Shih Chang Chen, Simon M. Jang, Douglas C.H. Yu, Mong Song Liang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH3/N2O post-deposition annealing, for deep submicrometer dual-gate MOSFETs have been studied extensively. N/O stack with NO-grown bottom oxide exhibits fewer flat-band voltage shifts and higher hole and electron mobility, but suffers from worse leakage current than that with conventional O2-grown bottom oxide. In post-deposition treatment, increasing NH3 nitridation temperature can effectively reduce the equivalent oxide thickness (EOT) and improve leakage current reduction rate, but it can result in worse mobility. Furthermore, the subsequent N2O annealing eliminates the defects and offers a contrary effect on the N/O stack in comparison with the NH3 nitridation step.

原文English
頁(從 - 到)2769-2776
頁數8
期刊IEEE Transactions on Electron Devices
48
發行號12
DOIs
出版狀態Published - 12月 2001

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