TY - GEN
T1 - Titanyl phthalocyanine (TiOPc) organic thin film transistors with highly π-π interaction
AU - Chen, Huang-Ming
AU - Chen, Yung Hsing
AU - Lin, Bo Ruei
PY - 2010/4
Y1 - 2010/4
N2 - The objective of this research is to obtain uniform vacuum-deposition triclinic phase II crystal of titanyl phthalocyanine (α-TiOPc) films from various TiOPc crystal forms. The crystal structure and morphology of vacuum-deposited TiOPc films can be manipulated by deposition rate and substrate temperature. Crystal structure was determined by X-ray diffraction (XRD). Thin film morphology was analyzed by scanning electron microscope (SEM). Highly ordered α-TiOPc film with an edge-on molecular orientation was deposited on octadecyltrichlorosilane (OTS) treated Si/SiO2 surface. All TiOPc crystal forms, such as amorphous, α and γ phases, provided me triclinic phase II crystal of TiOPc. The full width at half maximum (FWHM) of the peak at 7.5 degree in XRD spectra was 0.23, 0.27 and 0.29 for γ, α and amorphous powder when substrate temperature maintained at 180°C, respectively. The FWHM of me 7.5 degree peak can be achieved 0.22 deposited from all crystal forms at elevated temperature higher than 220°C The α-TiOPc deposition film exhibited an excellent p-type semiconducting behavior in air with dense packing structure due to the close π-π molecular packing. The devices, field-effect mobility range from 0.02 to 0.26 cm2/V s depending on various process parameters. The on/off current ratio (Ion/Ioff) is over 105. The TiOPc OTFTs will be applied as multi-parameter gas sensor in me near future.
AB - The objective of this research is to obtain uniform vacuum-deposition triclinic phase II crystal of titanyl phthalocyanine (α-TiOPc) films from various TiOPc crystal forms. The crystal structure and morphology of vacuum-deposited TiOPc films can be manipulated by deposition rate and substrate temperature. Crystal structure was determined by X-ray diffraction (XRD). Thin film morphology was analyzed by scanning electron microscope (SEM). Highly ordered α-TiOPc film with an edge-on molecular orientation was deposited on octadecyltrichlorosilane (OTS) treated Si/SiO2 surface. All TiOPc crystal forms, such as amorphous, α and γ phases, provided me triclinic phase II crystal of TiOPc. The full width at half maximum (FWHM) of the peak at 7.5 degree in XRD spectra was 0.23, 0.27 and 0.29 for γ, α and amorphous powder when substrate temperature maintained at 180°C, respectively. The FWHM of me 7.5 degree peak can be achieved 0.22 deposited from all crystal forms at elevated temperature higher than 220°C The α-TiOPc deposition film exhibited an excellent p-type semiconducting behavior in air with dense packing structure due to the close π-π molecular packing. The devices, field-effect mobility range from 0.02 to 0.26 cm2/V s depending on various process parameters. The on/off current ratio (Ion/Ioff) is over 105. The TiOPc OTFTs will be applied as multi-parameter gas sensor in me near future.
UR - http://www.scopus.com/inward/record.url?scp=79952516173&partnerID=8YFLogxK
U2 - 10.1557/PROC-1270-II06-46
DO - 10.1557/PROC-1270-II06-46
M3 - Conference contribution
AN - SCOPUS:79952516173
SN - 9781605112473
VL - 1270
T3 - Materials Research Society Symposium Proceedings
SP - 127
EP - 131
BT - Organic Photovoltaics and Related Electronics - From Excitons to Devices
T2 - 2010 MRS Spring Meeting
Y2 - 5 April 2010 through 9 April 2010
ER -