Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

H. Y. Huang*, C. K. Shu, W. C. Lin, C. H. Chuang, M. C. Lee, Wei-Kuo Chen, Y. Y. Lee

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process.

原文English
頁(從 - 到)3224-3226
頁數3
期刊Applied Physics Letters
76
發行號22
DOIs
出版狀態Published - 29 5月 2000

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