Time-resolved measurements of carrier capture in InAs/GaAs self-organized quantum dots

Kien-Wen Sun*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We have investigated the carrier capture and relaxation processes in InAs/GaAs self-assembled quantum dots (QDs) at room temperature by a photoluminescence (PL) up-conversion technique. We found that the carrier capture rate is faster than the intra-dot relaxation within the range of excitation densities that we have investigated. Under high excitation intensity, the electronic states in the dots were populated mainly by carriers directly captured from the barrier. However, at low excitation densities, the PL rise times were influenced by the carrier diffusion.

原文English
主出版物標題Physics, Chemistry, and Application of Nanostructures
主出版物子標題Reviews and Short Notes to Nanomeeting 2005: Minsk, Belarus, 24-27 May 2005
發行者World Scientific Publishing Co.
頁面78-82
頁數5
ISBN(電子)9789812701947
ISBN(列印)9812562885, 9789812562883
DOIs
出版狀態Published - 1 1月 2005
事件International Conference on Physics, Chemistry and Applications of Nanostructures Physics, NANOMEETING 2005 - Minsk, Belarus
持續時間: 24 5月 200527 5月 2005

出版系列

名字Physics, Chemistry and Application of Nanostructures - Reviews and Short Notes to NANOMEETING 2005

Conference

ConferenceInternational Conference on Physics, Chemistry and Applications of Nanostructures Physics, NANOMEETING 2005
國家/地區Belarus
城市Minsk
期間24/05/0527/05/05

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