TY - GEN
T1 - Time-resolved measurements of carrier capture in InAs/GaAs self-organized quantum dots
AU - Sun, Kien-Wen
PY - 2005/1/1
Y1 - 2005/1/1
N2 - We have investigated the carrier capture and relaxation processes in InAs/GaAs self-assembled quantum dots (QDs) at room temperature by a photoluminescence (PL) up-conversion technique. We found that the carrier capture rate is faster than the intra-dot relaxation within the range of excitation densities that we have investigated. Under high excitation intensity, the electronic states in the dots were populated mainly by carriers directly captured from the barrier. However, at low excitation densities, the PL rise times were influenced by the carrier diffusion.
AB - We have investigated the carrier capture and relaxation processes in InAs/GaAs self-assembled quantum dots (QDs) at room temperature by a photoluminescence (PL) up-conversion technique. We found that the carrier capture rate is faster than the intra-dot relaxation within the range of excitation densities that we have investigated. Under high excitation intensity, the electronic states in the dots were populated mainly by carriers directly captured from the barrier. However, at low excitation densities, the PL rise times were influenced by the carrier diffusion.
UR - http://www.scopus.com/inward/record.url?scp=84967407701&partnerID=8YFLogxK
U2 - 10.1142/9789812701947_0013
DO - 10.1142/9789812701947_0013
M3 - Conference contribution
AN - SCOPUS:84967407701
SN - 9812562885
SN - 9789812562883
T3 - Physics, Chemistry and Application of Nanostructures - Reviews and Short Notes to NANOMEETING 2005
SP - 78
EP - 82
BT - Physics, Chemistry, and Application of Nanostructures
PB - World Scientific Publishing Co.
T2 - International Conference on Physics, Chemistry and Applications of Nanostructures Physics, NANOMEETING 2005
Y2 - 24 May 2005 through 27 May 2005
ER -