Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications

Shivendra K. Rathaur, Tsung Ying Yang, Chih Yi Yang, Edward Yi Chang, Heng Tung Hsu, Abhisek Dixit

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

This experimental study examines the time-dependent dielectric breakdown (TDDB) on a hybrid charge trap gate stack for the normally OFF operation of the Ferroelectric charge trap GaN High Electron Mobility Transistor (FEG-HEMT) at room temperature. The abrupt change in drain current shows the hard break down (HBD) of the charge trap gate stack. A hybrid charge trap gate stack provides the percolation path at the gate recess edge. Step gate stress has been used to figure out the breakdown voltage and device failure current which are found to be 20V and 2.14 μA/mm respectively. The fitted parameter β (Weibull distribution slope) has been analyzed for the multiple-gate stress voltage 17V, 18V, and 19V. Based on the power law, the lifetime prediction has been investigated for 63.2%, 10%, and 0.1% failure rates on fitting the data to gate voltage 13.5V, 13.1V, and 12.5V, respectively, by extrapolation up to 10 years.

原文English
主出版物標題2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665497671
DOIs
出版狀態Published - 2022
事件2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 - Puebla, 墨西哥
持續時間: 4 7月 20226 7月 2022

出版系列

名字2022 IEEE Latin America Electron Devices Conference, LAEDC 2022

Conference

Conference2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
國家/地區墨西哥
城市Puebla
期間4/07/226/07/22

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